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| MT4S100U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100U UHF LOW NOISE AMPLIFIER APPLICATION 2.10.1 1.250.1 +0.1 0.2 -0.05 0.150.05 2 Unit: mm FEATURES * * Low Noise Figure :NF=0.72dB (@f=2GHz) 2.00.2 1.30.1 High Gain:|S21e| =16.0dB (@f=2GHz) 1 2 Marking 2 1 Type name +0.05 0.95 -0.15 P6 0.7 3 4 Maximum Ratings (Ta = 25C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 6 3 1.2 15 7 45 150 -55~150 Unit V V V mA mA mW C C 1.BASE 2.EMITTER 3.COLLECTOR 4.EMITTER USQ JEDEC JEITA TOSHIBA 2-2K1E Weight: 0.006 g (typ.) 1 00.1 2002-05-27 3 4 MT4S100U Microwave Characteristics (Ta = 25C) Characteristics Transition Frequency Insertion Gain Noise Figure Symbol fT |S21e| NF 2 Test Condition VCE=2V, IC=10mA, f=2GHz VCE=2V, IC=10mA, f=2GHz VCE=2V, IC=5mA, f=2GHz Min 18 13.5 - Typ. 22 16 0.72 Max 1.0 Unit GHz dB dB Electrical Characteristics (Ta = 25C) Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transistor Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=6V, IE=0 VEB=1V, IC=0 VCE=2V, IC=10mA VCB=2V, IE=0, f=1MHz VCB=2V, IE=0, f=1MHz (Note 1) Min 200 Typ. 0.41 0.14 Max 1 1 400 0.6 0.2 Unit A A pF pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 2002-05-27 MT4S100U |S21e| -I C VCE=2V 20 15 10 5 0 1 f=1GHz Ta=25 10 COLLECTOR CURRENT IC (mA) 100 1V 2 25 INSERTION GAIN |S21e| (dB) 20 |S21e| -I C 2 INSERTION GAIN |S21e| (dB) VCE=2V 15 1V 10 2 2 5 f=2GHz Ta=25 1 10 COLLECTOR CURRENT I C (mA) 100 0 30 TRANSITION FREQUENCY fT(GHz) fT-I C VCE=2V REVERSE TRANSFER CAPACITANCE Cre(pF) OUTPUT CAPACITANCE Cob(pF) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 Cre,Cob-V CB IE=0 f=1MHz Ta=25 25 20 15 10 5 0 1 1V f=2GHz Ta=25 10 COLLECTOR CURRENT I C (mA) 100 1 10 COLLECTOR-BASE VOLTAGE V CB (V) 2.0 1.8 NOISE FIGURE NF(dB) NF,Ga-I C 20 18 14 12 NF 10 8 6 ASSOCIATED GAIN Ga(dB) 100 COLLECTOR POWER DISSIPATION PC(mW) P C -Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1 Ga 16 80 60 45 40 20 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta() 175 f=2GHz 4 VCE=2V 2 Ta=25 0 10 100 COLLECTOR CURRENT I C (mA) 3 2002-05-27 MT4S100U RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2002-05-27 |
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